Innovative Nanocomposites for Low Power Phase?Change Memory: GeTe/C Multilayers
نویسندگان
چکیده
Innovative nanocomposites consisting of [(GeTe)4nm/C1nm]10 multilayers (MLs) deposited by magnetron sputtering are integrated in phase-change memory (PCM) test devices with a “wall structure”. Scanning transmission electron microscopy (STEM) shows that ML structure, crystallized GeTe layers, is kept after integration as-fabricated and also an additional annealing the at 425°C. The RESET current decreases 45% reduction 55% drift coefficient about 40% annealed 425°C compared to similar incorporating Ge2Sb2Te5. STEM imaging, coupled nano-beam diffraction energy loss spectroscopy, state correlated amorphized volume. This article protected copyright. All rights reserved.
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ژورنال
عنوان ژورنال: Physica Status Solidi (rrl)
سال: 2022
ISSN: ['1862-6254', '1862-6270']
DOI: https://doi.org/10.1002/pssr.202200054